Takashi Hosoda

Research Scientist, Stony Brook University

Optoelectronics Group
Department of Electrical and Computer Engineering
Stony Brook University

Research

Design, fabrication and characterization of GaSb-based mid-infrared optoelectronic semiconductor devices.

2012 - current

- Design, fabricate and characterize GaSb-based surface-emitting photonic crystal lasers.
- Develop THz emitters based on intra-cavity difference frequency generation (IC-DFG).
- Design and characterize passively mode-locked lasers for optical frequency comb operation.
- Integration of GaSb-based lasers on silicon-on-insulator (SOI)-based waveguide.
- Design and fabricate distributed feedback lasers operating in the range from 3.0 - 3.4 μm.
- high-power type-I cascade lasers operating near 3.0 μm.
- Develop dry etching techniques (CH₄/H₂ based) and new fabrication processes for GaSb-based optoelectronics devices.
- Develop lasers (3.0 μm) on compositionally graded metamorphic buffer layers, its study and characterizations.

second- and sixth-order LC-DFB lasers operating near 3.22 μm

Appl. Opt., 56, H74 (2017)

ECL with GaSb-based gain chip tunable from 3.05-3.25 μm corresponding to ~25 meV of tuning range

Opt. Eng., 57, 011012 (2017)

Review of cascade pumping scheme for GaSb-based type-I lasers

J. Sel. Top. Quant. Electron., 23, 1500708 (2017)

methane-hydrogen dry etching for GaSb-based laser heterostructures and rapid thermal processes

Electron. Lett., 53, 40 (2016)

→click here to see all the publications

GaSb-based type-I cascade lasers operating near 2.9 μm with 13 mW of RT output power

Electron. Lett., 52, 857 (2016)

GaSb-based type-I cascade lasers emitting at 3.2 μm with output power of more than 500 mW

Appl. Phys. Lett., 107, 111106 (2015)

room temperature multimode operation of lasers with GaInAsSb W-QWs at 3.3 μm (50 mW) and 3.4 μm (30 mW)

Photon. Technol. Lett., 26, 664 (2014)

laser structures grown on a compositionally graded buffer layers whose lattice constant is 1.3 - 1.6% larger than GaSb

Semicond. Sci. Technol., 27, 055011 (2012)

diffraction limited 3 μm operation (up to 37 mW) using dry etching technique

Electron. Lett., 49, 667 (2013)

cascaded type-I QW lasers producing up to 590 mW at 3.0 μm (RT)

Appl. Phys. Lett., 103, 121108 (2013)

2006 - 2011

Development of type-I multi mode laser diodes operating at wavelengths above 3.0 μm based on GaSb material system.
- developed high power type-I laser diodes operations above 3.0 μm utilizing AlGaInAsSb quinternary waveguide / barriers.
- studied the effect of quinternary (AlGaInAsSb) waveguide core (its thickness and composition) on device characteristics.
- lasers (2 μm-) on compositionally graded metamorphic buffer layers, its study and characterizations.

GaSb-based lasers operating at 3.44 μm with AlGaInAsSb quinternary waveguide - longest wavelength RT CW record output power of 29 mW

Electron. Lett., 46, 1455 (2010)

study of the number of QWs: the effect on laser performances at 3.36 μm, record output power of 15 mW

Appl. Phys. Lett., 93, 011103 (2008)

dissertation: GaSb-based type-I diode lasers operating at 3 μm and above

LAP LAMBERT Academic Publishing GmbH & Co. KG, 2012.

→click here to see all the publications

GaSb-based lasers operating in the spectral range from 3.1 to 3.3 μm with AlGaInAsSb quinternary waveguide, record power

Photon. Technol. Lett., 22, 718 (2010)

study of quinternary waveguide core, the effect of its thickness on 3 μm laser performance

Appl. Phys. Lett., 94, 261104 (2009)

room temperature multimode lasers operating at 3.1 μm with AlGaAsSb quaternary waveguide, 80 mW at RT

Appl. Phys. Lett., 92, 171111 (2008).

review of GaSb-based type-I lasers operating above 3 μm

J. Sel. Top. Quantum. Electron., 17, 1426 (2011)

Education

Ph.D.

Electrical Engineering, Stony Brook University, Stony Brook, NY, 2011
Dissertation title: GaSb-based type-I diode lasers operating at 3 μm and above

Advisors:	Dr. Gregory Belenky, Distinguished Professor, Stony Brook University
	Dr. Leon Shterengas, Associate Professor, Stony Brook University

B.E.

Electrical and Computer Engineering, Stony Brook University, 2005

Publications

Contact

Takashi Hosoda

Research Scientist

248 Heavy Engineering Building
Department of Electrican and Computer Engineering
Stony Brook University
Stony Brook, NY 11794-2350

E-mail: takashi.hosoda at stonybrook.edu

PH: 631-632-8532

Links

my linkedin page
my Google scholar page
my ResearchGate page

Optoelectronics Group
Department of Electrical and Computer Engineering
Stony Brook University
University Library

photo taken: Montauk Point Lighthouse, Montauk, NY

Takashi Hosoda

Research

2012 - current

2006 - 2011

Education

Ph.D.

B.E.

Publications

Book

Book chapters

Journals

Contact

Takashi Hosoda

Links