Dmitri DonetskiAssociate Professor 247 Light Engineering Building Phone: 631-632-8411 | E-mail: dima@ece.sunysb.edu |
Teaching
ESE218 Digital Systems
Design
ESE311 Analog Integrated Circuits
ESE372
Electronics
Design and technology of optoelectronic devices and microelectronic circuits. Molecular beam epitaxy of semiconductor heterostructures. Carrier kinetics in semiconductor materials and devices.
Scientific Degrees
Teaching and Research Experience
Awards
PAPERS IN SCIENTIFIC JOURNALS, BOOKS AND PROCEEDINGS
1. D. Donetsky, G. Belenky, S. P. Svensson, S. Suchalkin, “Minority carrier lifetime in Type-2 InAs-GaSb strained-layer superlattices
and bulk HgCdTe materials”, Appl.
Phys. Lett., 97, 052108 (2010).
2.
D. Donetsky, S. P. Svensson,
L. E. Vorobjev, G. Belenky,
“Carrier
lifetime measurements in short-period InAs/GaSb
Strained Layer Superlattice Structures”, Appl. Phys. Lett., 95, 212104 (2009).
3. J. Chen, G. Kipshidze,
L. Shterengas, T. Hosoda,
Y. Wang, D. Donetsky, G. Belenky,
“2.7-μm GaSb based diode lasers with quinary
waveguide”,
4. D. Donetsky, J.
Chen, L. Shterengas, G. Kipshidze
and D. Westerfeld, “2.3-micron high-power
Type-I quantum-well GaInAsSb/AlGaAsSb/GaSb laser
diode arrays with an increased fill-factor”, J. of Electron. Mater., 37, pp. 1770 -1773 (2008).
5. J. Chen, D. Donetsky,
L. Shterengas, M. Kisin, G.
Kipshidze, G. Belenky,
“Effect of quantum well compressive strain above 1 % on differential gain
and threshold current in type-I GaSb-based diode
lasers”, IEEE J. Quantum. Electron., 44,
pp.1204-1210 (2008).
6. G. Belenky, L. Shterengas, D. Donetsky, M. Kisin, G. Kipshidze,
“Advances in Type-I GaSb Based Lasers”,
Japan. J. Appl. Phys., 47, pp. 8236 -8238 (2008).
7. G. Belenky, D. Donetski, L. Shterengas, T. Hosoda, J.Chen, G. Kipshidze, M. Kisin,, D. Westerfeld, “Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 µm
and 3-3.1 µm with improved room-temperature performance”, SPIE, 6900,
Quantum Sensing and Nanophotonic Devices V, 690004
(2008).
8. M. W. Dashiell,
H. Ehsani, P. Sanders, F. Newman, C.A. Wang, D.
Chapman, Z.A. Shellenbarger, D. Donetski, N. Gu, S. Anikeev, “Triple-axis reciprocal space mapping of InGaAs Thermophotovoltaic diodes
grown on (100) InP substrates”, Solar Energy
Materials and Solar Cells, 92(9), pp. 1003-1010 (2008).
9. D. Donetsky, G. Kipshidze, L. Shterengas, T. Hosoda, G. Belenky, “2.3-μm Type-I Quantum Well GaInAsSb/AlGaAsSb/GaSb
laser diodes with a quasi-CW output power of 1.4 W”, Electron. Lett., 43
(15), pp. 810-812 (2007).
10. L. Shterengas;
G. Belenky; M. Kisin; D. Donetsky; D. Westerfeld,
“Recent developments in high power 2.3-2.4 μm diode lasers”, SPIE, 6552, Laser Source Technology for Defense and
Security
11. L. Shterengas,
G. Belenky, M. V. Kisin, D.
Donetsky, “High power 2.4 μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1 W of continuous
wave output power and a maximum power-conversion efficiency of 17.5 %”, Appl. Phys. Lett., 90, 011119
(2007).
12. D. Donetsky, S. Anikeev, N. Gu, M. Dashiell, H. Ehsani, F. Newman,
M. Wanlass, C. Wang, “Effects of Zinc and
Tellurium doping on minority carrier recombination in lattice-matched and
lattice-mismatched InGaAs/InP epitaxial
layers and thermophotovoltaic cells”, Proc. of
WCPEC-4 (2006), Piscataway, NJ: IEEE, 2, pp. 764-767 (2006).
13. M. W. Dashiell,
J.F. Beausang, H. Ehsani,
G. J. Nichols, D. M. Depoy, L. R. Danielson, P. Talamo, K. D. Rahner, E. J. Brown, S. R. Burger, P. M. Fourspring, W. F. Topper, P. F. Baldasaro,
C. A. Wang, R. Huang, M. Connors, G. Turner, Z. Shellenbarger,
G. Taylor, J. Li, R. Martinelli, D. Donetsky, S. Anikeev, G. Belenky and S. Luryi,
"Quaternary InGaAsSb Thermophotovoltaic
Diodes”, IEEE Trans. on Electron Devices, 53 (12), pp. 2879-2887 (2006).
14. B. Laikhtman, A.
Gourevitch, D. Donetsky, D.
Westerfeld and G. Belenky,
“Thermal resistance and optimal fill factor of high power laser
bar”, Semic. Sci.
Technol., 20, pp. 1087-1095 (2005).
15. A. Gourevitch,
B. Laikhtman, D. Westerfeld,
D. Donetsky, G. Belenky, C.
W. Trussell, Z. Shellenbarger,
H. An, R. U. Martinelli, “Transient thermal
analysis of InGaAsP-InP high-power diode laser arrays
with different fill factors”, J. Appl. Phys.,
97, 084503 (2005).
16. C. A. Wang, D. A. Shiau, D. Donetsky, S. Anikeev, G. Belenky, and S. Luryi,
“Extremely low surface recombination velocity in GaInAsSb/AlGaAsSb
heterostructures”, Appl.
Phys. Lett., 86, 101910 (2005).
17. L. Shterengas,
G.L. Belenky, A. Gourevitch,
D. Donetsky, J.G. Kim, R.U. Martinelli,
and D. Westerfeld, “High power 2.3-µm GaSb-based linear laser array”, IEEE Photon. Technol. Lett. 16, pp. 2218-2220
(2004).
18. M. W. Dashiell, J. F. Beausang, G. Nichols, D. M. Depoy,
L. R. Danielson, H. Ehsani, K. D. Rahner,
J. Azarkevich, P. Talamo,
E. Brown, S. Burger, P. Fourspring, W. Topper, P. F. Baldasaro, C. A. Wang, R. Huang, M. Connors, G. Turner, Z. Shellenbarger, G. Taylor, J. Li, R. Martinelli,
D. Donetski, S. Anikeev, G.
Belenky, S. Luryi, D. R.
Taylor, and J. Hazel, “0.52 eV Quaternary InGaAsSb Thermophotovoltaic Diode
Technology”,
19. C. A. Wang, R. K. Huang, M. K. Connors, D. A. Shiau, P. G.
Murphy, P. W. O'Brien, A. C. Anderson, D. Donetsky,
S. Anikeev, G. Belenky, S. Luryi, and G. Nichols, “Monolithic
Series-Interconnected GaInAsSb/AlGaAsSb Thermophotovoltaic Devices Wafer Bonded to GaAs”,
20. D. Donetsky, S. Anikeev, N. Gu, G. Belenky, S. Luryi, C.A. Wang, D.
A. Shiau, M. Dashiell, J. Beausang, G. Nichols, “Analysis of
recombination processes in 0.5 - 0.6 eV epitaxial GaInAsSb
lattice-matched to GaSb”,
21. C. A. Wang, D. A. Shaiu,
D. Donetsky, S. Anikeev, G.
Belenky, S. Luryi,
“Effect of growth interruption on surface recombination velocity in GaInAsSB/AlGaAsSb heterostructures
grown by organometallic vapor-phase epitaxy”, J. of Crystal Growth, 272 (1-4), pp.
711-718 (2004).
22. A. Gourevitch,
D. Donetsky, G. Belenky, B.
Laikhtman, D. Westerfeld,
Z. Shellenbarger, H. An, R. U. Martinelli,
C. W. Trussell, ”Transient thermal analysis of
1.47-m
high power diode laser arrays“, Proc. of the Solid State and Diode Laser
Technology Review, SSDLTR-04, P-9
(2004).
23. B. Laikhtman, A.
Gourevitch, D. Donetsky, G.
Belenky, “Current spread and overheating of
high power laser bars”, J. Appl. Phys., 95, pp.
3880-3889 (2004).
24. C. A. Wang, D. A. Shiau,
P. G. Murphy, P. W. O'Brien, R. K. Huang, M. K. Connors, A. C. Anderson,
D. Donetsky, S. Anikeev, G.
Belenky, D. M. Depoy, G.
Nichols, “Wafer bonding and epitaxial transfer
of GaSb-based epitaxy to GaAs for monolithic interconnection of thermophotovoltaic
devices”, J. of Electron. Mater., 33 (3),
pp. 213-217 (2004).
25. D. V. Donetsky,
R. U. Martinelli, G. L. Belenky,
“Mid-infrared GaSb-based lasers with Type-I heterointerfaces”, a chapter in "Advanced
Semiconductor Heterostructures: Novel Devices,
Potential Device Applications and Basic Properties", ed. by M. Dutta, M. Stroscio, World
Scientific, ISBN 981-238-389-5 (2003).
26. S. Anikeev, D. Donetsky, G. Belenky, S. Luryi, C. A. Wang, J. M. Borrego, G. Nichols,
“Measurement of the Auger recombination rate in p-type 0.54-eV GaInAsSb by time-resolved photoluminescence”, Appl. Phys. Lett., 83 (16), pp.
317-319 (2003).
27. A. Gourevitch, G. Belenky, D. Donetsky, C. W. Trussell, B. Laikhtman, R. Martinelli, H. An,
Z. Shellenbarger, “High-power 1.47 - 1.49 µm InGaAsP/InP diode laser arrays”, Appl.
Phys. Lett., 83 (4), pp. 617-619 (2003).
28. C. A. Wang, C. J. Vineis,
H. K. Choi, M. K. Connors, R. K. Huang, L. R.
Danielson, G. Nichols, G. W. Charache, D. Donetsky, S. Anikeev, G. Belenky, “Lattice-matched GaInAsSb/AlGaAsSb/GaSb
materials for thermophotovoltaic devices”,
29. D. Donetsky, C.
A. Wang, S. Anikeev, G. Belenky,
S. Luryi, and G. Nichols, “Reduction of
interfacial recombination in GaInAsSb/GaSb double heterostructures”, Appl.
Phys. Lett., 81 (25), pp. 4769-4771 (2002).
30. D. V. Donetsky,
R. U. Martinelli, G. L. Belenky,
“Mid-infrared GaSb-based lasers with Type-I heterointerfaces”, Intern. J. of High Speed
Electronics and Systems, 12 (4), pp. 1025-1038 (2002).
31. S. Suchalkin, D.
Westerfeld, D. Donetsky, R.
U. Martinelli, I. Vurgaftman,
J. R. Meyer, S. Luryi, G. Belenky,
“Optical gain and loss in 3-µm diode W lasers”, SPIE, 4651, pp.
185-192 (2002).
32. S. Suchalkin, D.
Westerfeld, D. Donetski, S.
Luryi, G. Belenky, R. Martinelli, I. Vurgaftman, J.
Meyer, “Optical gain and loss in 3-µm diode "W" quantum-well
lasers”, Appl. Phys. Lett.,
80 (16), pp. 2833-2835 (2002).
33. D. V. Donetsky,
D. Westerfeld, G. L. Belenky,
R. U. Martinelli, D. Z. Garbuzov,
and J. C. Connolly, “Extraordinarily wide optical gain spectrum in 2.2 -
2.5 µm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide
lasers”, J. Appl. Phys. Com., 90, pp. 4281-4283
(2001).
34. G. Belenky, C.
L. Reynolds, L. Shterengas, M. S. Hybertsen,
D. V. Donetsky, G. E. Shtengel,
S. Luryi, “Effect of p-doping on the
temperature dependence of differential gain in FP and DFB 1.3-µm InGaAsP-InP multiple-quantum-well lasers”, IEEE
Photon. Technol. Lett., 12
(8), pp. 969-971 (2000).
35. L. Shterengas,
R. Menna, C. W. Trussell,
D. Donetsky, G. Belenky, J.
Connolly, D. Garbuzov, “Effect of heterobarrier leakage on the performance of high-power
1.5-µm InGaAsP multiple-quantum-well lasers”,
J. Appl. Phys., 88 (5), pp. 2211-2214 (2000).
36. L. E. Vorob'ev,
D. V. Donetskii, D. A. Firsov,
“Photon hole-current drag in germanium”, JETP Lett.,
71 (8), pp. 331-333 (2000).
37. L. E. Vorobjev,
S. N. Danilov, D. V. Donetsky,
D. A. Firsov, E. Towe, R.
K. Zhukavin, S. G. Pavlov, V. N. Shastin,
“Intrasubband fast absorption and emission of
terahertz radiation by hot electrons in GaAs/AlGaAs
MQW”, Physica B, 272 (1-4), pp. 223-225 (1999).
38. E. Towe, L. E. Vorobjev, S. N. Danilov, Y. V. Kochegarov, D. A. Firsov, D. V. Donetsky, “Hot-electron far-infrared intrasubband absorption and emission in quantum
wells”, Appl. Phys. Lett.,
75 (19), pp. 2930-2932 (1999).
39. G. L. Belenky,
C. L. Reynolds, D. V. Donetsky, G. E. Shtengel, M. S. Hybertsen, M. A. Alam, G. A. Baraff, R. K. Smith,
R. F. Kazarinov, J. Winn, L. E. Smith, “Role of
p-doping profile and regrowth on the static
characteristics of 1.3-µm MQW InGaAsP-InP lasers:
Experiment and modeling”, IEEE J. Quant. Electron., 35 (10), pp.
1515-1520 (1999).
40. L. E. Vorobjev,
S. N. Danilov, D. V. Donetsky,
V. L. Zerova, Y. V. Kochegarov,
D. A. Firsov, V. A. Shalygin,
G. G. Zegrya, E. Towe,
“Hot electron FIR emission and absorption in GaAs/AlGaAs
QW”, Ultrafast Phenomena in Semiconductors,
Materials Science Forum, 297-2, pp. 45-48 (1999).
41. A. D. Andreev,
D. V. Donetsky, “Analysis of temperature
dependence of the threshold current in 2.3 - 2.6 µm InGaAsSb/AlGaAsSb
quantum-well lasers”, Appl. Phys. Lett., 74 (19), pp. 2743-2745 (1999).
42. L. E. Vorobiev,
D. V. Donetsky, E. A. Zibik,
D. A. Firsov, V. Y. Aleshkin,
O. A. Kuznetsov, L. K. Orlov,
“Emission and absorption of IR radiation in Ge/GeSi
quantum wells in lateral electric fields”, Izvestya
Akademii Nauk, Seriya Fizicheskaya, 63 (2), pp.
339-347 (1999).
43. D. V. Donetsky,
G. L. Belenky, D. Z. Garbuzov,
H. Lee, R. U. Martinelli, G. Taylor, S. Luryi, J. C. Connolly, “Direct measurements of heterobarrier leakage current and modal gain in 2.3-µm
double QW p-substrate InGaAsSb/AlGaAsSb broad area
lasers”, Electron. Lett., 35 (4), pp. 298-299 (1999).
44. M. S. Hybertsen,
M. A. Alam, G. E. Shtengel,
C. L. Reynolds, Jr., D. V. Donetsky, R. K. Smith, G.
A. Baraff, R. F. Kazarinov,
J. D. Wynn, L. E. Smith, “Role of p-doping profile in InGaAsP
multiquantum well lasers: comparison of simulation
and experiment, SPIE, 3625, Physics and Simulation of Optoelectronic Devices
VII, pp. 524 -530 (1999).
45. D. V. Donetsky,
G. L. Belenky, G. E. Shtengel,
C. L. Reynolds, R. F. Kazarinov, S. Luryi, “Temperature dependencies of output
characteristics of 1.3-µm InGaAs/InP lasers with different
profiles of p-doping”, SPIE, 3283, Physics and Simulation of
Optoelectronic Devices, pp. 423-431 (1998).
46. L. E. Vorob'ev,
D. V. Donetskii, D. A. Firsov,
E. B. Bondarenko, G. G. Zegrya,
E. Towe, “Terahertz emission from square wells
in a longitudinal electric field”,
47. G. L. Belenky,
D. V. Donetsky, C. L. Reynolds, R. F. Kazarinov, G. E. Shtengel, S. Luryi, J. Lopata,
“Temperature performance of 1.3-µm InGaAsP-InP
lasers with different profile of p-doping”,
48. L. E. Vorobjev,
L. E. Golub, D. V. Donetsky,
E. A. Zibik, Y. V. Kochegarov,
D. A. Firsov, V. A. Shalygin,
V. Y. Aleshkin, O. A. Kuznetsov,
L. K. Orlov, E. Towe, I. I.
Saydashev, T. S. Cheng, C. T. Foxon,
“Infrared and far-infrared absorption and emission by hot carriers in GaAs/AlGaAs and Ge/GeSi multiple
quantum wells”, Compound Semiconductors, Institute of Physics, Conference
Series, 155, pp. 153-156 (1997).
49. S. F. Shayesteh,
T. Dumelow, T. J. Parker, G. Mirjalili,
L. E. Vorobjev, D. V. Donetsky,
A. Kastalsky, “Far-infrared spectra of
reflectivity, transmission and hot-hole emission in p-doped GaAs/Al0.5Ga0.5As
multiple quantum wells”, Semicond. Sci. Technol., 11 (3), pp.
323-330 (1996).
50. L. E. Vorobev,
S. N. Danilov, D. V. Donetskii,
Y. V. Kochegarov, D. A. Firsov,
“Use of Ge hot-hole submillimeter
lasers for metrics of narrow-gap semiconductors”, Russian J. Nondestruct. Testing, 32 (1), pp. 40-43 (1996).
51. V. Y. Aleshkin,
L. E. Vorobev, D. V. Donetskii,
O. A. Kuznetsov, L. K. Orlov,
“Spontaneous emission of far infrared radiation by hot holes in germanium
and Ge/Ge1-XSiX quantum wells”, Semiconductors, 30
(11), pp. 1031-1036 (1996).
52. L. E. Vorobev,
D. V. Donetskii, L. E. Golub,
“Absorption and emission of far-IR radiation by hot holes in GaAs/AlGaAs quantum wells”, J
53. L. E. Vorobjev,
D. V. Donetskii, A. Kastalsky,
“Long-wavelength infrared emission from 2-Dimentional holes heated by a
longitudinal electric field in the quantum wells of the GaAs-AlGaAs
heterostructure”, Semiconductors, 29 (10), pp.
924-929 (1995).
54. L. E. Vorobjev,
S. N. Danilov, D. V. Donetsky,
D. A. Firsov, Y. V. Kochegarov,
V. I. Stafeev, “An injectionless
FIR laser based on interband transitions of hot holes
in Germanium”, Semicond. Sci.
Technol., 9 (5), Suppl. S,
pp. 641-644 (1994).
55. L. E. Vorobjev,
D. V. Donetski, D. A. Firsov,
“Hot hole electrooptic effect”, JETP Lett., 59 (12), pp. 869-873 (1994).
56. L. E. Vorobjev,
S. N. Danilov, D. V. Donetsky,
D. A. Firsov, Y. V. Kochegarov,
V. I. Stafeev, “Narrow-band tunable submillimeter hot hole injectionless
semiconductor laser and its use for cyclotron resonance inversigation”,
Optical Quant. Electron., 25 (10), pp. 705-721 (1993).
57. L. E. Vorobjev,
S. N. Danilov, D. V. Donetskii,
Y. V. Kochegarov, V. I. Stafeev,
D. A. Firsov, “Noninjection
narrow-band laser emitting far-infrared radiation due to hot holes and its use
in impurity breakdown investigations”, Semiconductors, 27 (1), pp. 77-82
(1993).
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